| RoHS (Unión Europea) | Compliant with Exemption |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | Active |
| Código HTS | 8541.29.00.95 |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Categoría del producto | Bipolar Power |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage (V) | 90 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector-Emitter Saturation Voltage (V) | 1@0.4A@4A|2.5@3.3A@10A |
| Maximum DC Collector Current (A) | 10 |
| Maximum Collector Cut-Off Current (nA) | 1000 |
| Minimum DC Current Gain | 20@4A@4V|5@10A@4V |
| Maximum Transition Frequency (MHz) | 2(Min) |
| Packaging | Tube |
| Mounting | Through Hole |
| Package Height | 16.12(Max) |
| Package Width | 4.9(Max) |
| Package Length | 10.63(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220FP |
| Pin Count | 3 |
| Lead Shape | Through Hole |
Implement this NPN MJF3055G GP BJT from ON Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 90 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
