| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Bipolar Power | |
| 1 | |
| 90 | |
| 5 | |
| 1@0.4A@4A|2.5@3.3A@10A | |
| 10 | |
| 1000 | |
| 20@4A@4V|5@10A@4V | |
| 2(Min) | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 16.12(Max) |
| Largeur du paquet | 4.9(Max) |
| Longueur du paquet | 10.63(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220FP |
| 3 | |
| Forme de sonde | Through Hole |
Implement this NPN MJF3055G GP BJT from ON Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 90 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |