| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 230 | |
| 200 | |
| 7 | |
| 1.5 | |
| -65 to 150 | |
| 3@1A@10A | |
| 15 | |
| 50000 | |
| 12@15A@5V|45@8A@5V|60@100mA@5V|60@1A@5V|60@3A@5V|60@5A@5V|60@7A@5V | |
| 200000 | |
| 30(Typ) | |
| -65 | |
| 150 | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 26.4(Max) |
| Package Width | 5.2(Max) |
| Package Length | 20.2(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-264 |
| 3 | |
| Lead Shape | Through Hole |
ON Semiconductor has the solution to your circuit's high-voltage requirements with their PNP MJL1302AG general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 200000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 200 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |