Compliant with Exemption | |
EAR99 | |
Active | |
8541.29.00.95 | |
SVHC | Yes |
Taux de SVHC dépassant le seuil autorisé | Yes |
Automotive | No |
PPAP | No |
PNP | |
Bipolar Power | |
Si | |
Single | |
1 | |
230 | |
200 | |
7 | |
1.5 | |
-65 to 150 | |
3@1A@10A | |
15 | |
50000 | |
12@15A@5V|45@8A@5V|60@100mA@5V|60@1A@5V|60@3A@5V|60@5A@5V|60@7A@5V | |
200000 | |
30(Typ) | |
-65 | |
150 | |
Tube | |
Installation | Through Hole |
Hauteur du paquet | 26.4(Max) |
Largeur du paquet | 5.2(Max) |
Longueur du paquet | 20.2(Max) |
Carte électronique changée | 3 |
Onglet | Tab |
Nom de lemballage standard | TO |
Conditionnement du fournisseur | TO-264 |
3 | |
Forme de sonde | Through Hole |
ON Semiconductor has the solution to your circuit's high-voltage requirements with their PNP MJL1302AG general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 200000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 200 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.