onsemiMMBT2222AM3T5GGP BJT

Trans GP BJT NPN 40V 0.6A 640mW 3-Pin SOT-723 T/R

Jump-start your electronic circuit design with this versatile NPN MMBT2222AM3T5G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 640 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Import TariffMay apply to this part

7,195 piezas: Se puede enviar hoy

    Total$0.15Price for 1

    • Service Fee  $7.00

      Se puede enviar hoy

      Ships from:
      Estados Unidos de América
      Date Code:
      2141+
      Manufacturer Lead Time:
      11 semanas
      Minimum Of :
      1
      Maximum Of:
      7195
      Country Of origin:
      China
         
      • Price: $0.1541
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Se puede enviar hoy

      Ships from:
      Estados Unidos de América
      Date Code:
      2141+
      Manufacturer Lead Time:
      11 semanas
      Country Of origin:
      China
      • In Stock: 7,195 piezas
      • Price: $0.1541