onsemiMMBT2222AM3T5G通用双极型晶体管

Trans GP BJT NPN 40V 0.6A 640mW 3-Pin SOT-723 T/R

Jump-start your electronic circuit design with this versatile NPN MMBT2222AM3T5G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 640 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Import TariffMay apply to this part

7,195 个零件: 可以明天配送

    Total$0.15Price for 1

    • Service Fee  $7.00

      可以明天配送

      Ships from:
      美国
      Date Code:
      2141+
      Manufacturer Lead Time:
      11 星期
      Minimum Of :
      1
      Maximum Of:
      7195
      Country Of origin:
      中国
         
      • Price: $0.1541
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • 可以明天配送

      Ships from:
      美国
      Date Code:
      2141+
      Manufacturer Lead Time:
      11 星期
      Country Of origin:
      中国
      • In Stock: 7,195
      • Price: $0.1541