onsemiMUN2211T1GBJT digital

Trans Digital BJT NPN 50V 0.1A 338mW 3-Pin SC-59 T/R

In addition to offering some of the benefits of traditional BJTs, the NPN MUN2211T1G digital transistor, developed by ON Semiconductor, can be used in digital signal processing circuits as well. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 338 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.

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Total en Stock: 465,901 piezas

Regional Inventory: 174,901

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      Date Code:
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      Country Of origin:
      China
         
      • Price: $0.1406
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
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      Date Code:
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      • Price: $0.1406
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