onsemiMUN2211T3GBJT digital

Trans Digital BJT NPN 50V 0.1A 338mW 3-Pin SC-59 T/R

ON Semiconductor brings you their latest NPN MUN2211T3G digital transistor, a component that can easily provide you with most of the features of traditional BJT's while maintaining a digital form. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 338 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.

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13 piezas: Se puede enviar en 10 días

    Total$0.02Price for 1

    • Se puede enviar en 10 días

      Ships from:
      Estados Unidos de América
      Date Code:
      1845+
      Manufacturer Lead Time:
      0 semanas
      Country Of origin:
      China
      • In Stock: 13 piezas
      • Price: $0.0240