Central Semiconductor2N2219A PBFREEGP BJT
Trans GP BJT NPN 40V 0.8A 800mW 3-Pin TO-39 Box
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| Diamètre | 9.4(Max) |
| Installation | Through Hole |
| Hauteur du paquet | 6.6(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-39 |
| 3 | |
| Forme de sonde | Through Hole |
Central Semiconductor brings you the solution to your high-voltage BJT needs with their NPN 2N2219A PBFREE general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 800 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |