onsemi2SC5964-TD-HGP BJT

Trans GP BJT NPN 50V 3A 1300mW 4-Pin(3+Tab) SOT-89 T/R

ON Semiconductor has the solution to your circuit's high-voltage requirements with their NPN 2SC5964-TD-H general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1300 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.

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132 pièces: Livraison en 11 jours

    Total$0.70Price for 1

    • Livraison en 11 jours

      Ships from:
      États Unis
      Date Code:
      1815+
      Manufacturer Lead Time:
      0 semaines
      Country Of origin:
      Chine
      • In Stock: 132 pièces
      • Price: $0.6951