onsemi 2SC5964-TD-H GP BJT
Trans GP BJT NPN 50V 3A 1300mW 4-Pin(3+Tab) SOT-89 T/R
製品技術仕様
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 100 | |
| 50 | |
| 6 | |
| 0.6 | |
| 1.2@100mA | |
| 150 | |
| 0.15@50mA@1A|0.29@100mA@2A | |
| 3 | |
| 1000 | |
| 200@100mA@2V | |
| 1300 | |
| 380(Typ) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.5 |
| Package Width | 2.5 |
| Package Length | 4.5 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-89 |
| 4 | |
| Lead Shape | Flat |
ON Semiconductor has the solution to your circuit's high-voltage requirements with their NPN 2SC5964-TD-H general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1300 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.
シンボルと足跡
| EDA / CAD Models |
