| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 20 | |
| 15 | |
| 5 | |
| 0.035@0.5mA@5mA|0.12@10mA@100mA | |
| 0.7 | |
| 200@50mA@2V | |
| 200 | |
| 250(Typ) | |
| -55 | |
| 125 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.25(Max) |
| Largeur du paquet | 1.65(Max) |
| Longueur du paquet | 3.05(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SC-59 |
| 3 | |
| Forme de sonde | Gull-wing |
If your circuit's specifications require a device that can handle high levels of voltage, ON Semiconductor's NPN 2SD1048-6-TB-E general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 200 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 125 °C. It has a maximum collector emitter voltage of 15 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |