| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 25 | |
| 5 | |
| 1.2@0.3A@3A | |
| 0.5@40mA@3.5A | |
| 5 | |
| 100@0.5A@2V|100@3A@2V|100@5A@5V | |
| 1000 | |
| 120(Typ) | |
| -65 | |
| 150 | |
| Bag | |
| Installation | Through Hole |
| Hauteur du paquet | 8.2(Max) |
| Largeur du paquet | 4.1(Max) |
| Longueur du paquet | 5.1(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-92L |
| 3 | |
| Forme de sonde | Through Hole |
STMicroelectronics brings you the solution to your high-voltage BJT needs with their NPN 2STL1525 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |