| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| Installation | Surface Mount |
| Hauteur du paquet | 0.9 |
| Largeur du paquet | 1.25 |
| Longueur du paquet | 2 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SC-88 |
| 6 | |
| Forme de sonde | Gull-wing |
Design various electronic circuits with this versatile PNP BC856BDW1T1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 380 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |