onsemiBC856BDW1T1GGP BJT

Trans GP BJT PNP 65V 0.1A 380mW 6-Pin SC-88 T/R

Design various electronic circuits with this versatile PNP BC856BDW1T1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 380 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
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