RoHS (Union Européenne) | Compliant with Exemption |
ECCN (États-Unis) | EAR99 |
Statut de pièce | Active |
Code HTS | 8541.29.00.95 |
SVHC | Yes |
Taux de SVHC dépassant le seuil autorisé | Yes |
Automotive | No |
PPAP | No |
Installation | Through Hole |
Hauteur du paquet | 10.8(Max) |
Largeur du paquet | 2.7(Max) |
Longueur du paquet | 7.8(Max) |
Carte électronique changée | 3 |
Onglet | Tab |
Nom de lemballage standard | TO |
Conditionnement du fournisseur | SOT-32 |
DĂ©compte de broches | 3 |
Forme de sonde | Through Hole |
Do you have a circuit where a higher current gain is required? STMicroelectronics' PNP BD678 Darlington transistor can help! This Darlington transistor array's maximum emitter base voltage is 5 V. This product's maximum continuous DC collector current is 4 A, while its minimum DC current gain is 750@1.5A@3 V. It has a maximum collector emitter saturation voltage of 2.5@30mA@1.5A V. Its maximum power dissipation is 40000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.