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Infineon Technologies AGBFR740L3RHE6327XTSA1BJT FR
Trans RF BJT NPN 4V 0.04A 160mW Automotive AEC-Q101 3-Pin TSLP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| SiGe | |
| Single | |
| 1 | |
| 13 | |
| 4 | |
| <20 | |
| 1.2 | |
| 0.03 | |
| 0.001 to 0.06 | |
| 900 | |
| 40 | |
| 3V/25mA | |
| 160@25mA@3V | |
| 120 to 200 | |
| 0.38 | |
| 0.09 | |
| 160 | |
| 11(Typ) | |
| 24.5 | |
| 25(Typ) | |
| 42000(Typ) | |
| 0.8(Min) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Largeur du paquet | 1 |
| Longueur du paquet | 0.6 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TSLP |
| Conditionnement du fournisseur | TSLP |
| 3 | |
| Forme de sonde | No Lead |
Look no further than the BFR740L3RHE6327XTSA1 RF bi-polar junction transistor, developed by Infineon Technologies, which can offer high radio frequency power compatibility. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |