Implement this versatile NPN CPH6003A-TL-E GP BJT from ON Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 2 V. Its maximum power dissipation is 800 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 12 V and a maximum emitter base voltage of 2 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

A datasheet is only available for this product at this time.