Diodes IncorporatedDSS8110Y-7GP BJT
Trans GP BJT NPN 100V 1A 625mW 6-Pin SOT-363 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Single Quad Collector | |
| 1 | |
| 120 | |
| 100 | |
| 5 | |
| 1.05@100mA@1A | |
| 0.04@10mA@100mA|0.12@50mA@500mA|0.2@100mA@1A | |
| 1 | |
| 150@1mA@10V|150@250mA@10V|100@500mA@10V|80@1A@10V | |
| 625 | |
| 100(Min) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.95 mm |
| Largeur du paquet | 1.3 mm |
| Longueur du paquet | 2.15 mm |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-363 |
| 6 | |
| Forme de sonde | Gull-wing |
The NPN DSS8110Y-7 general purpose bipolar junction transistor, developed by Diodes Zetex, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |