Diodes IncorporatedFCX1053ATAGP BJT
Trans GP BJT NPN 75V 3A 2000mW 4-Pin(3+Tab) SOT-89 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 150 | |
| 75 | |
| 5 | |
| 1@100mA@3A | |
| 0.03@20mA@0.2A|0.075@20mA@0.5A|0.21@100mA@2A|0.2@10mA@1A|0.44@200mA@4.5A | |
| 3 | |
| 10 | |
| 270@10mA@2V|300@1A@2V|300@500mA@2V|40@4.5A@2V | |
| 1600 | |
| 140(Typ) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5 |
| Largeur du paquet | 2.5 |
| Longueur du paquet | 4.5 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-89 |
| 4 | |
| Forme de sonde | Flat |
If your circuit's specifications require a device that can handle high levels of voltage, Diodes Zetex's NPN FCX1053ATA general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1600 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 75 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |