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Diodes IncorporatedFMMT624TAGP BJT
Trans GP BJT NPN 125V 1A 806mW 3-Pin SOT-23 T/R
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 125 | |
| 125 | |
| 7 | |
| 1@50mA@1A | |
| 0.05@10mA@0.1A|0.15@50mA@0.5A|0.22@10mA@0.5A|0.25@50mA@1A | |
| 1 | |
| 100 | |
| 200@10mA@10V|300@200mA@10V|100@1A@10V | |
| 806 | |
| 155(Typ) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.98 mm |
| Largeur du paquet | 1.3 mm |
| Longueur du paquet | 2.9 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Implement this versatile NPN FMMT624TA GP BJT from Diodes Zetex into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 125 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |