Diodes IncorporatedFMMT722TAGP BJT
Trans GP BJT PNP 70V 1.5A 806mW 3-Pin SOT-23 T/R
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 70 | |
| 70 | |
| 7 | |
| 1.05@200mA@1.5A | |
| 0.05@10mA@0.1A|0.22@100mA@1A|0.26@200mA@1.5A|0.2@20mA@0.5A | |
| 1.5 | |
| 100 | |
| 175@1A@5V|300@100mA@5V|300@10mA@5V|40@1.5A@5V | |
| 806 | |
| 200(Typ) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.98 |
| Largeur du paquet | 1.3 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Look no further than Diodes Zetex's PNP FMMT722TA general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 625 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 70 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |