Diodes IncorporatedFMMT722TA通用双极型晶体管
Trans GP BJT PNP 70V 1.5A 806mW 3-Pin SOT-23 T/R
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 70 | |
| 70 | |
| 7 | |
| 1.05@200mA@1.5A | |
| 0.05@10mA@0.1A|0.22@100mA@1A|0.26@200mA@1.5A|0.2@20mA@0.5A | |
| 1.5 | |
| 100 | |
| 175@1A@5V|300@100mA@5V|300@10mA@5V|40@1.5A@5V | |
| 806 | |
| 200(Typ) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.98 |
| Package Width | 1.3 |
| Package Length | 2.9 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Look no further than Diodes Zetex's PNP FMMT722TA general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 625 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 70 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |