Diodes IncorporatedFZT7053TADarlington BJT
Trans Darlington NPN 100V 1.5A 2000mW 4-Pin(3+Tab) SOT-223 T/R
Compliant with Exemption | |
EAR99 | |
Active | |
8541.29.00.75 | |
SVHC | Yes |
Taux de SVHC dépassant le seuil autorisé | Yes |
Automotive | No |
PPAP | No |
NPN | |
Single Dual Collector | |
1 | |
100 | |
100 | |
12 | |
1.5 | |
0.1 | |
1.5@0.1mA@100mA | |
200(Min) | |
10000@100mA@5V|1000@1A@5V | |
2000 | |
-55 | |
150 | |
Tape and Reel | |
Installation | Surface Mount |
Hauteur du paquet | 1.6 |
Largeur du paquet | 3.5 |
Longueur du paquet | 6.5 |
Carte électronique changée | 3 |
Onglet | Tab |
Nom de lemballage standard | SOT |
Conditionnement du fournisseur | SOT-223 |
4 | |
Forme de sonde | Gull-wing |
Compared to other transistors, the NPN FZT7053TA Darlington transistor from Diodes Zetex can provide you with a higher current gain value. This product's maximum continuous DC collector current is 1.5 A, while its minimum DC current gain is 10000@100mA@5 V|1000@1A@5V. It has a maximum collector emitter saturation voltage of 1.5@0.1mA@100mA V. This Darlington transistor array's maximum emitter base voltage is 12 V. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 12 V.