Diodes IncorporatedFZT795ATAGP BJT
Trans GP BJT PNP 140V 3A 3000mW 4-Pin(3+Tab) SOT-223 T/R
Compliant with Exemption | |
EAR99 | |
Active | |
8541.29.00.75 | |
SVHC | Yes |
Taux de SVHC dépassant le seuil autorisé | Yes |
Automotive | No |
PPAP | No |
PNP | |
Bipolar Power | |
Si | |
Single Dual Collector | |
1 | |
140 | |
140 | |
7 | |
0.95@50mA@500mA | |
0.25@50mA@500mA|0.3@1mA@100mA|0.3@5mA@200mA | |
3 | |
100@300mA@2V|250@200mA@2V|300@10mA@2V | |
3000 | |
100(Min) | |
-55 | |
150 | |
Tape and Reel | |
Installation | Surface Mount |
Hauteur du paquet | 1.6 |
Largeur du paquet | 3.5 |
Longueur du paquet | 6.5 |
Carte électronique changée | 3 |
Onglet | Tab |
Nom de lemballage standard | SOT |
Conditionnement du fournisseur | SOT-223 |
4 | |
Forme de sonde | Gull-wing |
Design various electronic circuits with this versatile PNP FZT795ATA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 140 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.