Diodes IncorporatedFZT795ATA通用双极型晶体管
Trans GP BJT PNP 140V 3A 3000mW 4-Pin(3+Tab) SOT-223 T/R
Compliant with Exemption | |
EAR99 | |
Active | |
8541.29.00.75 | |
SVHC | Yes |
SVHC超标 | Yes |
Automotive | No |
PPAP | No |
PNP | |
Bipolar Power | |
Si | |
Single Dual Collector | |
1 | |
140 | |
140 | |
7 | |
0.95@50mA@500mA | |
0.25@50mA@500mA|0.3@1mA@100mA|0.3@5mA@200mA | |
3 | |
100@300mA@2V|250@200mA@2V|300@10mA@2V | |
3000 | |
100(Min) | |
-55 | |
150 | |
Tape and Reel | |
Mounting | Surface Mount |
Package Height | 1.6 |
Package Width | 3.5 |
Package Length | 6.5 |
PCB changed | 3 |
Tab | Tab |
Standard Package Name | SOT |
Supplier Package | SOT-223 |
4 | |
Lead Shape | Gull-wing |
Design various electronic circuits with this versatile PNP FZT795ATA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 140 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.