Infineon Technologies AGIGB15N60TATMA1Puce IGBT
Trans IGBT Chip N-CH 600V 26A 130W 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| 600 | |
| ±20 | |
| 1.5 | |
| 30 | |
| 0.1 | |
| 130 | |
| -40 | |
| 175 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.4 |
| Largeur du paquet | 9.25 |
| Longueur du paquet | 10 |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO-263 |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
The IGB15N60TATMA1 IGBT transistor from Infineon Technologies is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 130000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -40 °C to 175 °C.
| EDA / CAD Models |