| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Unknown |
| PPAP | Unknown |
| Installation | Through Hole |
| Hauteur du paquet | 26.16(Max) |
| Largeur du paquet | 5.13(Max) |
| Longueur du paquet | 19.96(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-264 |
| 3 |
Make an effective common source amplifier using this IXFK180N25T power MOSFET from Ixys Corporation. Its maximum power dissipation is 1390000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes gigamos technology.
| EDA / CAD Models |