| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | Unknown |
| PPAP | Unknown |
| Mounting | Through Hole |
| Package Height | 26.16(Max) |
| Package Width | 5.13(Max) |
| Package Length | 19.96(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-264 |
| 3 |
Make an effective common source amplifier using this IXFK180N25T power MOSFET from Ixys Corporation. Its maximum power dissipation is 1390000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes gigamos technology.
| EDA / CAD Models |