| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| EA | |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| 2500 | |
| ±20 | |
| 3.2 | |
| 32 | |
| 0.5 | |
| 250 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 20.88 |
| Largeur du paquet | 5.03 |
| Longueur du paquet | 19.91 |
| Carte électronique changée | 3 |
| Conditionnement du fournisseur | ISOPLUS I4-PAC |
| 3 |
The IXLF19N250A IGBT transistor from Ixys Corporation will work effectively even with higher currents. Its maximum power dissipation is 250000 mW. It has a maximum collector emitter voltage of 2500 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |