| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Installation | Screw |
| Largeur du paquet | 25.5(Max) |
| Longueur du paquet | 38.3(Max) |
| Carte électronique changée | 4 |
| Conditionnement du fournisseur | SOT-227B |
| 4 | |
| Forme de sonde | Screw |
Don't be afraid to step up the amps in your device when using this IXYN100N120C3H1 IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 690000 mW. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |