| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Installation | Surface Mount |
| Hauteur du paquet | 0.95 |
| Largeur du paquet | 1.3 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Looking for a component that can both amplify and switch between signals within your circuit? The LND150K1-G power MOSFET from Microchip Technology provides the solution. Its maximum power dissipation is 360 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with dmos technology. This N channel MOSFET transistor operates in depletion mode.
| EDA / CAD Models |