| RoHS (Union Européenne) | Compliant |
| ECCN (États-Unis) | EAR99 |
| Statut de pièce | Active |
| Code HTS | 8541.21.00.95 |
| Automotive | No |
| PPAP | No |
| Installation | Through Hole |
| Hauteur du paquet | 5.33(Max) |
| Largeur du paquet | 4.19(Max) |
| Longueur du paquet | 5.21(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-92 |
| Décompte de broches | 3 |
Thanks to Microchip Technology, both your amplification and switching needs can be taken care of with one component: the LND150N3-G power MOSFET. Its maximum power dissipation is 740 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes dmos technology. This N channel MOSFET transistor operates in depletion mode.
