| 欧州RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.21.00.95 |
| Automotive | No |
| PPAP | No |
| Mounting | Through Hole |
| Package Height | 5.33(Max) |
| Package Width | 4.19(Max) |
| Package Length | 5.21(Max) |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | TO-92 |
| Pin Count | 3 |
Thanks to Microchip Technology, both your amplification and switching needs can be taken care of with one component: the LND150N3-G power MOSFET. Its maximum power dissipation is 740 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes dmos technology. This N channel MOSFET transistor operates in depletion mode.
