onsemiMJF127GDarlington BJT
Trans Darlington PNP 100V 5A 2000mW 3-Pin(3+Tab) TO-220FP Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Single | |
| 1 | |
| 100 | |
| 100 | |
| 5 | |
| 5 | |
| 10 | |
| 2@12mA@3A|3.5@20mA@5A | |
| 1000@500mA@3V|2000@3A@3V | |
| 2000 | |
| -65 | |
| 150 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 16.12(Max) |
| Largeur du paquet | 4.9(Max) |
| Longueur du paquet | 10.63(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220FP |
| 3 | |
| Forme de sonde | Through Hole |
ON Semiconductor brings you their latest PNP MJF127G Darlington transistor, a component that can easily provide you with much higher current gain values. This product's maximum continuous DC collector current is 5 A, while its minimum DC current gain is 1000@500mA@3 V|2000@3A@3V. It has a maximum collector emitter saturation voltage of 2@12mA@3A|3.5@20mA@5A V. This Darlington transistor array's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |