| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Installation | Surface Mount |
| Hauteur du paquet | 1.09 |
| Largeur du paquet | 1.5 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SC-59 |
| 3 | |
| Forme de sonde | Gull-wing |
Look no further than ON Semiconductor's PNP MSA1162GT1G general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 200 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |