onsemiNSV1C300ET4GGP BJT
Trans GP BJT PNP 100V 3A 2100mW Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Yes |
| PNP | |
| Bipolar Power | |
| Single | |
| 1 | |
| 140 | |
| 100 | |
| 6 | |
| 1@0.1A@1A | |
| 0.07@10mA@0.1A|0.15@0.1A@1A|0.25@0.2A@2A|0.4@0.3A@3A | |
| 3 | |
| 120@1A@2V|180@0.1A@2V|180@500mA@2V|50@3A@2V | |
| 2100 | |
| 100(Typ) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.38(Max) |
| Largeur du paquet | 6.22(Max) |
| Longueur du paquet | 6.73(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO-252 |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
The versatility of this PNP NSV1C300ET4G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |