STMicroelectronicsPD55008S-ERF MOSFET
Trans RF MOSFET N-CH 40V 4A 3-Pin PowerSO-10RF (Straight lead) Tube
Compliant with Exemption | |
EAR99 | |
Active | |
8541.29.00.95 | |
SVHC | Yes |
Taux de SVHC dépassant le seuil autorisé | Yes |
Automotive | No |
PPAP | No |
Single | |
Enhancement | |
N | |
1 | |
LDMOS | |
40 | |
±20 | |
20(Min) | |
4 | |
58@12.5V | |
2.8@12.5V | |
38@12.5V | |
1.6 | |
52800 | |
8(Min) | |
17 | |
1000 | |
55 | |
-65 | |
165 | |
Tube | |
Installation | Surface Mount |
Hauteur du paquet | 3.5 |
Largeur du paquet | 9.4 |
Longueur du paquet | 9.5 |
Carte électronique changée | 3 |
Conditionnement du fournisseur | PowerSO-10RF (Straight lead) |
3 | |
Forme de sonde | Flat |
Amplifying and switching electronic signals fast and reliably can be done with this PD55008S-E RF amplifier from STMicroelectronics specified for radio frequency environments. Its maximum power dissipation is 52800 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C.