STMicroelectronicsPD55015TR-ERF MOSFET
Trans RF MOSFET N-CH 40V 5A 3-Pin PowerSO-10RF (Formed lead) T/R
Compliant with Exemption | |
EAR99 | |
Active | |
8541.29.00.95 | |
SVHC | Yes |
Taux de SVHC dépassant le seuil autorisé | Yes |
Automotive | No |
PPAP | No |
Single | |
Enhancement | |
N | |
1 | |
LDMOS | |
40 | |
±20 | |
20(Min) | |
5 | |
89@12.5V | |
6.5@12.5V | |
60@12.5V | |
2.5 | |
73000 | |
15(Min) | |
14 | |
1000 | |
55 | |
-65 | |
165 | |
Tape and Reel | |
Industrial | |
Installation | Surface Mount |
Hauteur du paquet | 3.5 |
Largeur du paquet | 9.4 |
Longueur du paquet | 9.5 |
Carte électronique changée | 3 |
Conditionnement du fournisseur | PowerSO-10RF (Formed lead) |
3 | |
Forme de sonde | Gull-wing |
Amplifying and switching electronic signals fast and reliably can be done with this PD55015TR-E RF amplifier from STMicroelectronics specified for radio frequency environments. Its maximum power dissipation is 73000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz.
EDA / CAD Models |