STMicroelectronicsPD55015TR-E射频 MOSFETs
Trans RF MOSFET N-CH 40V 5A 3-Pin PowerSO-10RF (Formed lead) T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| LDMOS | |
| 40 | |
| ±20 | |
| 20(Min) | |
| 5 | |
| 89@12.5V | |
| 6.5@12.5V | |
| 60@12.5V | |
| 2.5 | |
| 73000 | |
| 15(Min) | |
| 14 | |
| 1000 | |
| 55 | |
| -65 | |
| 165 | |
| Tape and Reel | |
| Industrial | |
| Mounting | Surface Mount |
| Package Height | 3.5 |
| Package Width | 9.4 |
| Package Length | 9.5 |
| PCB changed | 3 |
| Supplier Package | PowerSO-10RF (Formed lead) |
| 3 | |
| Lead Shape | Gull-wing |
Amplifying and switching electronic signals fast and reliably can be done with this PD55015TR-E RF amplifier from STMicroelectronics specified for radio frequency environments. Its maximum power dissipation is 73000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz.
| EDA / CAD Models |