STMicroelectronicsPD55025TR-ERF MOSFET
Trans RF MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Formed lead) T/R
Compliant with Exemption | |
EAR99 | |
Active | |
8541.29.00.95 | |
SVHC | Yes |
Taux de SVHC dépassant le seuil autorisé | Yes |
Automotive | No |
PPAP | No |
Single | |
Enhancement | |
N | |
1 | |
LDMOS | |
40 | |
±20 | |
20(Min) | |
7 | |
86@12.5V | |
5.8@12.5V | |
76@12.5V | |
2.5(Min) | |
79000 | |
25(Min) | |
14.5 | |
1000 | |
50 | |
-65 | |
165 | |
Tape and Reel | |
Installation | Surface Mount |
Hauteur du paquet | 3.5 |
Largeur du paquet | 9.4 |
Longueur du paquet | 9.5 |
Carte électronique changée | 3 |
Conditionnement du fournisseur | PowerSO-10RF (Formed lead) |
3 | |
Forme de sonde | Gull-wing |
Using semiconductor technology, this PD55025TR-E RF amplifier from STMicroelectronics operates at high frequencies to amplify or switch electronic signals and electrical power. Its maximum power dissipation is 79000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz.
EDA / CAD Models |