STMicroelectronicsPD55025TR-ERF FET
Trans RF MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Formed lead) T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| LDMOS | |
| 40 | |
| ±20 | |
| 20(Min) | |
| 7 | |
| 86@12.5V | |
| 5.8@12.5V | |
| 76@12.5V | |
| 2.5(Min) | |
| 79000 | |
| 25(Min) | |
| 14.5 | |
| 1000 | |
| 50 | |
| -65 | |
| 165 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 3.5 |
| Package Width | 9.4 |
| Package Length | 9.5 |
| PCB changed | 3 |
| Supplier Package | PowerSO-10RF (Formed lead) |
| 3 | |
| Lead Shape | Gull-wing |
Using semiconductor technology, this PD55025TR-E RF amplifier from STMicroelectronics operates at high frequencies to amplify or switch electronic signals and electrical power. Its maximum power dissipation is 79000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz.
| EDA / CAD Models |