onsemiSBC857BDW1T1GGP BJT

Trans GP BJT PNP 45V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R

If your circuit's specifications require a device that can handle high levels of voltage, ON Semiconductor's PNP SBC857BDW1T1G general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 380 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.

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      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Prêt à être expédié dès aujourd'hui

      Ships from:
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      Date Code:
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      • In Stock: 6 000 pièces
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