onsemiSBC857BDW1T1GGP BJT

Trans GP BJT PNP 45V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R

If your circuit's specifications require a device that can handle high levels of voltage, ON Semiconductor's PNP SBC857BDW1T1G general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 380 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.

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      Date Code:
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      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • 本日発送

      Ships from:
      アメリカ合衆国
      Date Code:
      2247+
      Manufacturer Lead Time:
      12 週間
      Country Of origin:
      中国
      • In Stock: 820 部分
      • Price: $0.1547
    • (3000)

      本日発送

      Increment:
      3000
      Ships from:
      アメリカ合衆国
      Date Code:
      2424+
      Manufacturer Lead Time:
      12 週間
      Country Of origin:
      中国
      • In Stock: 6,000 部分
      • Price: $0.0310