STMicroelectronicsSTGW28IH125DFPuce IGBT
Trans IGBT Chip N-CH 1250V 60A 375W 3-Pin(3+Tab) TO-247 Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Installation | Through Hole |
| Hauteur du paquet | 20.15(Max) |
| Largeur du paquet | 5.15(Max) |
| Longueur du paquet | 15.75(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247 |
| 3 | |
| Forme de sonde | Through Hole |
You won't need to worry about any lagging in your circuit with this STGW28IH125DF IGBT transistor from STMicroelectronics. Its maximum power dissipation is 375000 mW. It has a maximum collector emitter voltage of 1250 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes field stop|trench technology.
| EDA / CAD Models |
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