onsemi TIP115G Darlington BJT
Trans Darlington PNP 60V 2A 2000mW 3-Pin(3+Tab) TO-220AB Tube
Spécifications techniques du produit
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Single | |
| 1 | |
| 60 | |
| 60 | |
| 5 | |
| 2 | |
| 1000 | |
| 2.5@8mA@2A | |
| 1000@1A@4V|500@2A@4V | |
| 2000 | |
| -65 | |
| 150 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 9.28(Max) mm |
| Largeur du paquet | 4.83(Max) mm |
| Longueur du paquet | 10.53(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
Look no further than ON Semiconductor's PNP TIP115G Darlington transistor, which can amplify the signal to provide higher current gains. This Darlington transistor array's maximum emitter base voltage is 5 V. This product's maximum continuous DC collector current is 2 A, while its minimum DC current gain is 1000@1A@4 V|500@2A@4V. It has a maximum collector emitter saturation voltage of 2.5@8mA@2A V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.
Symboles et Empreintes
| EDA / CAD Models |
