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STMicroelectronicsTIP142Darlington BJT
Trans Darlington NPN 100V 10A 125000mW 3-Pin(3+Tab) TO-247 Tube
Compliant with Exemption | |
EAR99 | |
Active | |
8542.33.00.01 | |
SVHC | Yes |
Taux de SVHC dépassant le seuil autorisé | Yes |
Automotive | No |
PPAP | No |
NPN | |
Single | |
1 | |
100 | |
100 | |
5 | |
10 | |
1000 | |
2@10mA@5A|3@40mA@10A | |
1000@5A@4V|500@10A@4V | |
125000 | |
-65 | |
150 | |
Tube | |
Installation | Through Hole |
Hauteur du paquet | 20.15(Max) |
Largeur du paquet | 5.15(Max) |
Longueur du paquet | 15.75(Max) |
Carte électronique changée | 3 |
Onglet | Tab |
Nom de lemballage standard | TO |
Conditionnement du fournisseur | TO-247 |
3 | |
Forme de sonde | Through Hole |
Thanks to STMicroelectronics' NPN TIP142 Darlington transistor, you can easily amplify a current and output a much higher current gain value within your circuit. This product's maximum continuous DC collector current is 10 A, while its minimum DC current gain is 1000@5A@4 V|500@10A@4V. It has a maximum collector emitter saturation voltage of 2@10mA@5A|3@40mA@10A V. This Darlington transistor array's maximum emitter base voltage is 5 V. Its maximum power dissipation is 125000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.
EDA / CAD Models |