Diodes IncorporatedZTX690BSTZGP BJT
Trans GP BJT NPN 45V 2A 1000mW 3-Pin E-Line Box
Compliant | |
EAR99 | |
Active | |
8541.29.00.75 | |
Automotive | No |
PPAP | No |
Installation | Through Hole |
Hauteur du paquet | 3.9 mm |
Largeur du paquet | 2.28 mm |
Longueur du paquet | 4.57 mm |
Carte électronique changée | 3 |
Nom de lemballage standard | TO |
Conditionnement du fournisseur | E-Line |
3 | |
Forme de sonde | Through Hole |
Implement this NPN ZTX690BSTZ GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C.