Compliant with Exemption | |
EAR99 | |
Active | |
8541.29.00.75 | |
SVHC | Yes |
Taux de SVHC dépassant le seuil autorisé | Yes |
Automotive | No |
PPAP | No |
NPN | |
Bipolar Power | |
Si | |
Single | |
1 | |
150 | |
60 | |
6 | |
1.05@200mA@4A | |
0.05@5mA@0.1A|0.15@50mA@2A|0.1@50mA@1A|0.25@200mA@5A | |
5 | |
50 | |
100@10mA@1V|100@2A@1V|25@10A@1V|75@5A@1V | |
1200 | |
130(Typ) | |
-55 | |
200 | |
Box | |
Installation | Through Hole |
Hauteur du paquet | 3.9 |
Largeur du paquet | 2.28 |
Longueur du paquet | 4.57 |
Carte électronique changée | 3 |
Nom de lemballage standard | TO |
Conditionnement du fournisseur | E-Line |
3 | |
Forme de sonde | Through Hole |
Design various electronic circuits with this versatile NPN ZTX851STZ GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V.