Diodes IncorporatedZTX851STZ通用双极型晶体管
Trans GP BJT NPN 60V 5A 1200mW 3-Pin E-Line Box
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 150 | |
| 60 | |
| 6 | |
| 1.05@200mA@4A | |
| 0.05@5mA@0.1A|0.15@50mA@2A|0.1@50mA@1A|0.25@200mA@5A | |
| 5 | |
| 50 | |
| 100@10mA@1V|100@2A@1V|25@10A@1V|75@5A@1V | |
| 1200 | |
| 130(Typ) | |
| -55 | |
| 200 | |
| Box | |
| Mounting | Through Hole |
| Package Height | 3.9 |
| Package Width | 2.28 |
| Package Length | 4.57 |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | E-Line |
| 3 | |
| Lead Shape | Through Hole |
Design various electronic circuits with this versatile NPN ZTX851STZ GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |